| 1. | The empty spaces in the conduction band are at too high an energy level to be of use
导带里的空间则由于能量太高而无法利用。 |
| 2. | Quantum confinement effects of the lowest conduction band states in semiconductor quantum dots
半导体量子点最低导带态的量子限制效应 |
| 3. | Effective masses at the top of valence band and at the bottom of conduction band are deduced from the band structure
价带顶和导带底的有效质量从计算得到的能带结构中求出。 |
| 4. | The highest - energy band containing electrons is called the valence band , and the next higher one is the conduction band
填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。 |
| 5. | The light - induced - electrons were mainly on conduction band , voo / vo and vo / v energy level . the electrons under 0 _ ( 2 ) / 0 _ ( 2 ) were not useful to photocatalysis
和v口v能级之上，位于吸附态02 / 02 ‘能级以下的光生电子对光催化没有贡献。 |
| 6. | There are mainly three arguments on the physical origin of the new conduction band minimum of ganas ( or galnnas ) . they are band anti - crossing model , gaas conduction band mixing model and impurity band model
关于ganas的导带带边的物理本质，目前主要有三种争论较激烈的观点，它们分别是能带反交叉模型， gaas导带混合模型，杂质带模型。 |
| 7. | The defects energy levels intensity became smaller , the electrons on the conduction band became more and photocatalysis became better with the heat treatment temperature , the similar conclusion was drawn from experiments
随着热处理温度的升高，试样的缺陷能级密度减小，导带上光生电子的数目相应增大，光催化效率提高，实验中也得出了同样的结论。 |
| 8. | Influence of strain on subband structure is described by a factor dk , which is the phonon induced band deformation potential extracted from experiment data . in strained si conduction band , the value of dk is 2 . 4 times larger than its si counterpart
在该模型中,应力对子能带结构的影响通过声子的形变势能dk表示, dk为经实验修正得到的经验参数,在应变硅导带中,其值是体硅材料形变势能的2 . 4倍。 |
| 9. | Our pl spectra under hydrostatic pressure showed that the conduction band minimum is in fact the result of the interaction and mixing of the gaas conduction band states . people are still arguing that ganxas , . x ( x < 0 . 1 ) and gaas will form type - i or type - ii quantum well
通过光压力光谱的研究，我们发现gan _ xas _ ( 1 - x ) ( x 0 . 1 )的导带带边态实际上主要是gaas各导带态相互作用的结果，这为导带混合模型提供了实验的证据。 |
| 10. | Uv - vis and pl spectra were used to study the energy band structure and the holding states of light - induced - electrons of tio _ ( 2 ) powder and films prepared by magnetron sputtering . the energy band structure and light - induce - electrons holding states were studied by pl spectra , conduction band and impurity energy levels were emerged together and formed a new continuum band
导带和杂质带连到一起形成了连续带?杂质能带，光生电子并不是位于导带之上，武汉理工大学硕士学位论文而是占据了2 . 5一3 . sev的连续带上，主要集中于2 . 65一3 . oev之间。 |
